Description:  The thin lines to the left are microscopic silicon bars that flex slightly from side to side when a current is applied. Each is the principal component of a nanomechanical memory cell. The numbers indicate the memory's speed. The longest bar measures eight microns.
Source:  Boston University
Story:  Nanomechanical memory demoed
TRN November 17/24, 2004
TRN Categories:  Data Storage Technology; Nanotechnology; Materials Science and Engineering
Form:  Still

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