This image and the diagram
below it show a transistor made from a multilayer nanowire. The core
of the nanowire is doped silicon and the first layer is germanium.
The second layer (green in the diagram) is the insulator silicon oxide.
The outer layer is doped germanium. S is the source electrode, G is
the gate electrode, and D is the drain electrode.
Lieber Group, Harvard University
TRN November 13/20, 2002
Circuits; Semiconductors; Materials Science and Engineering; Chemistry